Type: Material growth equipment

Function: The system can grow atomically flat thin film and nano-structures of semiconductors in ultra-high vacuum environment.

Type: Material fabrication equipment

Function: The system can draw designed shapes on a surface covered with resist. The pattern of resist that can subsequently be transferred to the substrate material by etching.

Device for Reactive Ion Etching (RIE) with Inductive Coupled Plasma (ICP) Source for Cl and F chemistry (OXFORD RIE).

RIE technique combines isotropic chemical etching and anisotropic physical etching (sputtering).

• RIE: control on ion energy and ion density, but not independently.
• ICP: control on ion density
• ICP-RIE: independent control on ion density and ion energy.

HHV Thin Film Deposition System ATS 500 - Evaporation

• Telemark multi pocket electron beam evaporation source
• 6 crucibles of 7 cc volume each (used with 4cc liners)
• 270° beam deflection
• 6kW power rating
• X-Y beam sweep coils
• Plug-in emitter assembly
• Ultimate vacuum < 2 x 10-7 mbar
• Sample holder up to 6” wafer
• 360° sample rotation, variable rotation speeds in the range 20 to 60 RPM
• Quartz lamp substrate heater up to 250 °C
• Film thickness measurement via quartz crystal sensor
• Evaporation materials (for the moment): Au, Ti, Cr, Ni, Ge, SiO2

Atomic Force Microscope (Nanosurf CoreAFM)

Easy-to-use AFM for research.

Measuring modes:

• Static Force Microscopy
• Lateral Force Microscopy
• Standard Spectroscopy
• Standard Lithography
• Dynamic Force Microscopy
• Phase Contrast Microscopy
• Force Modulation Mode
• MFM
• Liquid Imaging
• „QuickPrescan“, Up to 8 times faster and tip-saving image previews
• Kelvin Probe Force Microscopy (KPFM)
• Piezoresponse Force Microscopy (PFM)

The T-4909-AE is a versatile manual die bonder designed for precision microelectronics assembly. Featuring Tresky’s True Vertical Technology™, it ensures accurate chip placement with ±10 µm precision and 95 mm Z-movement. Key features include a touchscreen interface, force control, optional tool heating, and compatibility with various bonding techniques like epoxy and flip-chip. Modular and customizable, it’s ideal for R&D labs and small-scale production. Its integrated high-definition camera and LED illumination enhance usability and alignment accuracy.

Type: Characterization setup

Function: The setup can provide a stable measurement environment from 3.2K to 350K with low thermal fluctuations and nanometer level vibrations.

Type: Characterization setup

Function: The system can provide a stable measurement environment from 3.8K to 320K and the magnetic field on sample to 9T.

Type: Characterization setup

Function: A mobile cryostation with an integrated optical breadboard. Can cool down to 3.8K.

Type: Laser

Function: The system can produce continuous-wave, ultra-narrow linewidth laser from 725nm to 975nm.

Type: Laser

Function: The system can produce pulse laser from 680nm to 1080nm with the width of 140fs.

Type: Laser

Function: This modelocked laser system can generate ~2ps pulses over a wide wavelength range from 1000-1600nm at 76MHz. It can be frequency-locked to an external 76MHz reference.

Type: Laser

Function: Using SHG and parametric downconversion, this CW laser system covers a large wavelength range from ~500 to ~3300nm.

Type: Characterization setup

Function: The setup can take white light images of small structures with the resolution of several micrometers.

Type: Characterization setup

Function: The setup can measure the coherent time of the incident light, operating at the wavelength around 780nm.

Type: Characterization setup

Function: The setup can take spectrums of the incident light.

Type: Characterization setup

Function: The setup can measure the indistinguishability of the incident light with the wavelength around 780nm.

Type: Characterization setup

Function: The setup can take spectrums of the incident light and has a higher resolution compared with the single spectrometer.

Type: Characterization setup

Function: The setup can take spectrums of the incident light at telecom-wavelength with high efficiency.  

Type: Characterization setup

Function: The detector can detect single photons with four channels optimized for signal wavelength at 800nm. It is significantly faster than conventional single photon detector.

Type: Characterization setup

Function: The setup can count single photons with high detection efficiency, and a temporal resolution of up to 350 ps.

Type: Time correlated single photon counter 

Function: The device is used for converting single photon signals into fluorescence lifetime histograms or second-order intensity correlation histograms