Zeige Ergebnisse 681 - 700 von 1171
2012
Ubbelohde, N., Fricke, C., Flindt, C., Hohls, F., & Haug, R. J. (2012). Measurement of finite-frequency current statistics in a single-electron transistor. Nature Communications, 3, Artikel 612. https://doi.org/10.1038/ncomms1620
Ubbelohde, N., Roszak, K., Hohls, F., Maire, N., Haug, R. J., & Novotný, T. (2012). Strong quantum memory at resonant Fermi edges revealed by shot noise. Scientific reports, 2, Artikel 374. https://doi.org/10.1038/srep00374
Vasil'eva, G. Y., Alekseev, P. S., Ivanov, Y. L., Vasil'ev, Y. B., Smirnov, D., Schmidt, H., Haug, R. J., Gouider, F., & Nachtwei, G. (2012). Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering. JETP letters, 96(7), 471-474. https://doi.org/10.1134/S0021364012190137
Veith, B., Dullweber, T., Kranz, C., Werner, F., Harder, N. P., Schmidt, J., Roos, B. F. P., Dippell, T., & Brendel, R. (2012). Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells. Energy Procedia, 27, 379-384. https://doi.org/10.1016/j.egypro.2012.07.080
Vermang, B., Werner, F., Stals, W., Lorenz, A., Rothschild, A., John, J., Poortmans, J., Mertens, R., Gortzen, R., Poodt, P., Roozeboom, F., & Schmidt, J. (2012). Spatially-separated atomic layer deposition of Al 2O 3, a new option for high-throughput si solar cell passivation. In Program : 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (S. 1144-1149). Artikel 6186155 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186155
Wietler, T. F., Rugeramigabo, E. P., Bugiel, E., & Rojas, E. G. (2012). Relaxed germanium on porous silicon substrates. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (S. 150-151). Artikel 6222502 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings). https://doi.org/10.1109/ISTDM.2012.6222502
2011
Barthold, P., Lüdtke, T., Schmidt, H., & Haug, R. J. (2011). Low-temperature hysteresis in the field effect of bilayer graphene. New journal of physics, 13, Artikel 043020. https://doi.org/10.1088/1367-2630/13/4/043020
Block, T., Tegenkamp, C., Baringhaus, J., Pfnür, H., & Inaoka, T. (2011). Plasmons in Pb nanowire arrays on Si(557): Between one and two dimensions. Physical Review B - Condensed Matter and Materials Physics, 84(20), Artikel 205402. https://doi.org/10.1103/PhysRevB.84.205402
Bockhorn, L., Barthold, P., Schuh, D., Wegscheider, W., & Haug, R. J. (2011). Magnetoresistance in a high-mobility two-dimensional electron gas. Physical Review B - Condensed Matter and Materials Physics, 83(11), Artikel 113301. https://doi.org/10.1103/PhysRevB.83.113301
Brendel, R., Petermann, J. H., Zielke, D., Schulte-Huxel, H., Kessler, M., Gatz, S., Eidelloth, S., Bock, R., Garralaga Rojas, E., Schmidt, J., & Dullweber, T. (2011). High-efficiency cells from layer transfer: A first step toward thin-film/wafer hybrid silicon technologies. IEEE journal of photovoltaics, 1(1), 9-15. Artikel 6018975. https://doi.org/10.1109/JPHOTOV.2011.2165529
Brendel, R. (2011). Modeling solar cells with the dopant-diffused layers treated as conductive boundaries. Progress in Photovoltaics: Research and Applications, 20(1), 31-43. https://doi.org/10.1002/pip.954
Eldridge, P. S., Hübner, J., Oertel, S., Harley, R. T., Henini, M., & Oestreich, M. (2011). Spin-orbit fields in asymmetric (001)-oriented GaAs/AlxGa 1-xAs quantum wells. Physical Review B - Condensed Matter and Materials Physics, 83(4), Artikel 041301. https://doi.org/10.1103/PhysRevB.83.041301
English, D. J., Lagoudakis, P. G., Harley, R. T., Eldridge, P. S., Hübner, J., & Oestreich, M. (2011). Strain-induced spin relaxation anisotropy in symmetric (001)-oriented GaAs quantum wells. Physical Review B - Condensed Matter and Materials Physics, 84(15), Artikel 155323. https://doi.org/10.1103/PhysRevB.84.155323
Ernst, M., & Brendel, R. (2011). Modeling effective carrier lifetimes of passivated macroporous silicon layers. Solar Energy Materials and Solar Cells, 95(4), 1197-1202. https://doi.org/10.1016/j.solmat.2011.01.017
Ferré, R., Gogolin, R., Müller, J., Harder, N. P., & Brendel, R. (2011). Laser transfer doping for contacting n-type crystalline Si solar cells. Physica Status Solidi (A) Applications and Materials Science, 208(8), 1964-1966. https://doi.org/10.1002/pssa.201127046
Ferré, R., Martín, I., Trassl, R., Alcubilla, R., & Brendel, R. (2011). Simultaneous gettering and emitter formation in multicrystalline-Si wafers by annealing phosphorus doped amorphous silicon compounds. Applied physics letters, 98(2), Artikel 022102. https://doi.org/10.1063/1.3535616
Fricke, L., Hohls, F., Ubbelohde, N., Kaestner, B., Kashcheyevs, V., Leicht, C., Mirovsky, P., Pierz, K., Schumacher, H. W., & Haug, R. J. (2011). Quantized current source with mesoscopic feedback. Physical Review B - Condensed Matter and Materials Physics, 83(19), Artikel 193306. https://doi.org/10.1103/PhysRevB.83.193306
Fricke, C., Hohls, F., Sethubalasubramanian, N., Fricke, L., & Haug, R. J. (2011). Transport through a quantum dot analyzed by electron counting. In Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, ICPS-30 (S. 305-306). (AIP Conference Proceedings; Band 1399). American Institute of Physics Inc.. https://doi.org/10.1063/1.3666375, https://doi.org/10.15488/2804
Gatz, S., Hannebauer, H., Hesse, R., Werner, F., Schmidt, A., Dullweber, T., Schmidt, J., Bothe, K., & Brendel, R. (2011). 19.4%-efficient large-area fully screen-printed silicon solar cells. Physica Status Solidi - Rapid Research Letters, 5(4), 147-149. https://doi.org/10.1002/pssr.201105045
Gatz, S., Bothe, K., Müller, J., Dullweber, T., & Brendel, R. (2011). Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells. Energy Procedia, 8, 318-323. https://doi.org/10.1016/j.egypro.2011.06.143, https://doi.org/10.15488/1149