Current research topics
Defects in semiconductors for photovoltaics
- Light-induced recombination centres
- Interaction of impurities
- Spatially resolved analysis of recombination and trapping centers
New characterization methods
- Temperature and injection dependent charge carrier lifetime spectroscopy
- Spatially resolved measurement of charge carrier lifetimes, trap densities and energy levels using camera-based methods (IR, PL)
- Time and temperature dependent measurement of charge carrier lifetimes and solar cell parameters to analyze the kinetics of defect reactions
- Combined corona lifetime method for interface characterization
Surface passivation and selective coatings
- Low temperature surface passivation (z.B. a-SiNx, a-Si, Al2O3, …)
- Charge carrier selective layers (PEDOT:PSS, TiOx…)
- Analysis of the fundamental physical passivation mechanisms
- Characterization of interface properties (density of states, recombination)
- Theoretical modeling of surface recombination
The experimental work of AG Schmidt takes place mainly at the Institute for Solar Energy Research Hamelin (ISFH)