Showing results 1 - 20 out of 385
2025
Yin, Y., Kruskopf, M., Gournay, P., Rolland, B., Götz, M., Pesel, E., Tschirner, T., Momeni, D., Chatterjee, A., Hohls, F., Pierz, K., Scherer, H., Haug, R. J., & Schumacher, H. W. (2025). Graphene quantum Hall resistance standard for realizing the unit of electrical resistance under relaxed experimental conditions. Physical review applied, 23(1), Article 014025. https://doi.org/10.1103/PhysRevApplied.23.014025
2024
Bockhorn, L., Schuh, D., Reichl, C., Wegscheider, W., & Haug, R. J. (2024). Influence of the electron density on the giant negative magnetoresistance in two-dimensional electron gases. Physical Review B, 109(20), Article 205416. https://doi.org/10.1103/PhysRevB.109.205416
Dani, O., Hussein, R., Bayer, J. C., Pierz, K., Kohler, S., & Haug, R. J. (2024). Direct measurement of spin-flip rates of a self-assembled InAs double quantum dot in single-electron tunneling. Physical Review B, 109(12), Article L121404. https://doi.org/10.48550/arXiv.2310.11259, https://doi.org/10.1103/PhysRevB.109.L121404
Dzinnik, M. J., Akmaz, N. E., Hannebauer, A., Schaate, A., Behrens, P., & Haug, R. J. (2024). Locally controlled MOF growth on functionalized carbon nanotubes. Communications Materials, 5, Article 38. https://doi.org/10.1038/s43246-024-00473-9
Yin, Y., Kruskopf, M., Bauer, S., Tschirner, T., Pierz, K., Hohls, F., Haug, R. J., & Schumacher, H. W. (2024). Quantum Hall resistance standards based on epitaxial graphene with p-type conductivity. Applied physics letters, 125(6), Article 064001. https://doi.org/10.1063/5.0223723
2023
Cao, X., Yang, J., Fandrich, T., Zhang, Y., Rugeramigabo, E. P., Brechtken, B., Haug, R. J., Zopf, M., & Ding, F. (2023). A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K. Nano letters, 23(13), 6109-6115. https://doi.org/10.48550/arXiv.2304.14170, https://doi.org/10.1021/acs.nanolett.3c01570
Thole, L., Ben Kalefa, A., Belke, C., Locmelis, S., Bockhorn, L., Behrens, P., & Haug, R. J. (2023). Long-Persistent Photoconductivity in Transistor Structures Made from Thin ZrS3-Films. ACS Applied Electronic Materials, 5(11), 6286–6291. https://doi.org/10.1021/acsaelm.3c01163
2022
Cao, X., Zhang, Y., Ma, C., Wang, Y., Brechtken, B., Haug, R. J., Rugeramigabo, E. P., Zopf, M., & Ding, F. (2022). Local droplet etching on InAlAs/InP surfaces with InAl droplets. AIP Advances, 12(5), Article 055302. https://doi.org/10.1063/5.0088012
Dani, O., Hussein, R., Bayer, J. C., Kohler, S., & Haug, R. J. (2022). Temperature-dependent broadening of coherent current peaks in InAs double quantum dots. Communications Physics, 5(1), Article 292. https://doi.org/10.1038/s42005-022-01074-z
Hong, S. J., Wang, D., Wulferding, D., Lemmens, P., & Haug, R. J. (2022). Twisted double ABC-stacked trilayer graphene with weak interlayer coupling. Physical Review B, 105(20), Article 205404. https://doi.org/10.1103/PhysRevB.105.205404
Peibst, R., Rienäcker, M., Larionova, Y., Folchert, N., Haase, F., Hollemann, C., Wolter, S., Krügener, J., Bayerl, P., Bayer, J., Dzinnik, M., Haug, R. J., & Brendel, R. (2022). Towards 28 %-efficient Si single-junction solar cells with better passivating POLO junctions and photonic crystals. Solar Energy Materials and Solar Cells, 238, Article 111560. https://doi.org/10.1016/j.solmat.2021.111560
Thole, L., Belke, C., Locmelis, S., Behrens, P., & Haug, R. J. (2022). Electrical Properties of Thin ZrSe3Films for Device Applications. ACS Omega, 7(44), 39913-39916. https://doi.org/10.1021/acsomega.2c04198
Zhao, Z., Ding, L., Hinterding, R., Mundstock, A., Belke, C., Haug, R. J., Wang, H., & Feldhoff, A. (2022). MXene assisted preparation of well-intergrown ZIF-67 membrane for helium separation. Journal of membrane science, 652, Article 120432. https://doi.org/10.1016/j.memsci.2022.120432
2021
Bayerl, P., Folchert, N., Bayer, J., Dzinnik, M., Hollemann, C., Brendel, R., Peibst, R., & Haug, R. J. (2021). Contacting a single nanometer-sized pinhole in the interfacial oxide of a poly-silicon on oxide (POLO) solar cell junction. Progress in Photovoltaics: Research and Applications, 29(8), 936-942. https://doi.org/10.1002/pip.3417
Belke, C., Locmelis, S., Thole, L., Schmidt, H., Behrens, P., & Haug, R. J. (2021). Thickness-dependent gap energies in thin layers of Hf Te5. 2D Materials, 8(3), Article 035029. https://doi.org/10.1088/2053-1583/abf98b
Bockhorn, L., Rode, J. C., Gnörich, L., Zuo, P., Brechtken, B., & Haug, R. J. (2021). Interlayer configurations of self-assembled folded graphene. Applied physics letters, 118(17), Article 173101. https://doi.org/10.1063/5.0047602
Brange, F., Schmidt, A., Bayer, J. C., Wagner, T., Flindt, C., & Haug, R. J. (2021). Controlled emission time statistics of a dynamic single-electron transistor. Science advances, 7(2), Article eabe0793. https://doi.org/10.1126/sciadv.abe0793
Cao, X., Yang, J., Li, P., Zhang, Y., Rugeramigabo, E. P., Brechtken, B., Haug, R. J., Zopf, M., & Ding, F. (2021). Single photon emission from ODT passivated near-surface GaAs quantum dots. Applied physics letters, 118(22), Article 221107. https://doi.org/10.1063/5.0046042
Hong, S. J., Belke, C., Rode, J. C., Brechtken, B., & Haug, R. J. (2021). Helical-edge transport near ν = 0 of monolayer graphene. Current applied physics, 27, 25-30. https://doi.org/10.1016/j.cap.2021.04.001
Hong, S. J., Xiao, X., Wulferding, D., Belke, C., Lemmens, P., & Haug, R. J. (2021). Strain-induced doping and zero line mode at the fold of twisted Bernal-stacked bilayer graphene. 2D Materials, 8(4), Article 045009. https://doi.org/10.1088/2053-1583/ac152e